Question 1

Figure 4
-Refer to Figure 4. The transistor is biased for
A)depletion mode
B)enhancement mode
C)neither

Accepted Answer

C

Question 2

A certain MOSFET has IDSS = 6 mA, VGS = -0.67 V, and VGS(off )= -5 V. The drain current, ID is
A)3.0 mA
B)0.75 mA
C)1.5 mA
D)4.5 Ma

Accepted Answer

D

Question 3

Figure 1
-Refer to Figure 1, which represents two curves for a JFET. At ID = 6 mA, the transconductance, gm, is approximately
A)7700 µmho
B)3400 µmho
C)4300 µmho
D)12,000 µmho

Accepted Answer

B

Question 4

Figure 3 Assume IS1U1B1DSS S1U1B0= 3.5 mA and VS1U1B1GS(off)S1U1B0= -2 V.
-Refer to Figure 3. An advantage to the voltage divider bias over self- bias is that voltage- divider bias
A)allows for greater variation in JFET parameters
B)has higher input resistance
C)enables the gate- source to be forward- biased or reverse- biased
D)all of the above

Accepted Answer

Voltage divider bias allows for greater variation in JFET parameters because it stabilizes the operating point against variations in transistor parameters.

Question 5

Figure 3 Assume IS1U1B1DSS S1U1B0= 3.5 mA and VS1U1B1GS(off)S1U1B0= -2 V. -If a JFET bias circuit is designed with current- source biasing, A)ID is constant for any JFET B)IDSS is constant for any JFET C)V_GSis constant for any JFET D)V_GS(off)is constant for any JFET

Accepted Answer

Current-source biasing in a JFET circuit is designed to keep the drain current (ID) constant despite variations in the JFET device characteristics or changes in the power supply voltage.

Question 6

Figure 1
-Refer to Figure 1. The source resistor, RS, that would self- bias this JFET at approximately VGS = -2 V is
A)220 ▲
B)470 ▲
C)360 ▲
D)1 M▲

Accepted Answer

The correct resistor value for self-biasing a JFET at approximately VGS = -2 V is typically determined by the JFET's characteristics and desired operating point. A 470 Ω resistor is a common choice for moderate biasing levels in JFET circuits.

Question 7

Figure 2 Assume the curve in (b)represents the transistor in (a).
-Refer to Figure 2. If VS = 1.3 V, then VGS is
A)0 V
B)1.3 V
C)-1.3 V
D)4.0 V

Accepted Answer

The answer of  Figure 2 Assume the curve in...

Question 8

Figure 1
-Refer to Figure 1. The curve on the left is called the
A)negative resistance curve
B)transconductance curve
C)transfer curve
D)characteristic curve

Accepted Answer

The curve on the left is typically referred to as the transfer curve, which shows the relationship between the input and output of a device, such as a transistor.

Question 9

An advantage of a JFET over a BJT is that the JFET has
A)higher input resistance
B)higher gain
C)better linearity
D)all of the above

Accepted Answer

JFETs have higher input resistance compared to BJTs because they are voltage-controlled devices, where the input signal is applied to a gate that does not draw current. This results in a very high input impedance.

Question 10

Figure 2 Assume the curve in (b)represents the transistor in (a).
-Refer to Figure 2. IDSS is approximately
A)4.0 mA
B)6.0 mA
C)3.3 mA
D)8.0 mA

Accepted Answer

The answer of  Figure 2 Assume the curve in...

Question 11

The IGBT has characteristics of a
A)JFET input and BJT output
B)MOSFET input and a BJT output
C)BJT input and a JFET output
D)none of the above

Accepted Answer

The Insulated Gate Bipolar Transistor (IGBT) combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of BJTs, making B the correct choice.

Question 12

Figure 5 The equations for K and IS1U1B1D S1U1B0are given in part (c).
-Refer to Figure 5. ID is approximately
A)2.2 mA
B)0.88 mA
C)3.4 mA
D)1.2 mA

Accepted Answer

The value of ID (drain current) is approximately 2.2 mA as indicated by the figure.

Question 13

Assume a transistor has an IDSS of 3.0 mA and a gm0 of 2500 µS. The gate- source cutoff voltage, ^VGS(off)^{, is} A)-1.2 V B)-1.8 V C)-0.6 V D)-2.4 V

Accepted Answer

The answer of Assume a transistor has an IDSS of...

Question 14

Figure 3 Assume IS1U1B1DSS S1U1B0= 3.5 mA and VS1U1B1GS(off)S1U1B0= -2 V.
-Refer to Figure 3. If the drain voltage, VD, is 7.6 V, what is VGS?
A)-0.62 V
B)-1.8 V
C)-1.5 V
D)-4.2 V

Accepted Answer

VGS = VD - VDS = 7.6 V - 9.2 V = -1.6 V

Question 15

Figure 5 The equations for K and IS1U1B1D S1U1B0are given in part (c).
-Refer to Figure 5. VGS is
A)6.9 V
B)4.4 V
C)7.6 V
D)3.6 V

Accepted Answer

The answer of  Figure 5 The equations for K...

Question 16

A FET that has no channel until one is induced electrically is
A)an E- MOSFET
B)a VMOSFET
C)a p- channel JFET
D)a D- MOSFET

Accepted Answer

An E-MOSFET (Enhancement MOSFET) has no channel until a voltage is applied to the gate, which induces a channel for current to flow.

Question 17

Figure 3 Assume IS1U1B1DSS S1U1B0= 3.5 mA and VS1U1B1GS(off)S1U1B0= -2 V.
-Refer to Figure 3. If RS were shorted to ground, the current, ID, is
A)1/2 IDSS
B)0 mA
C)> IDSS
D)IDSS

Accepted Answer

The answer of  Figure 3 Assume IS1U1B1DSS S1U1B0= 3.5...

Question 18

Figure 1
-Refer to Figure 1. The pinch- off voltage, Vp, is
A)-2.5 V
B)+5 V
C)-5 V
D)0 V

Accepted Answer

The answer of  Figure 1
-Refer to Figure 1. The...

Question 19

A JFET that is operating as a voltage- controlled resistance is
A)typically biased near the origin
B)has minimum resistance at VGS = 0
C)is operating in the ohmic region
D)all of the above

Accepted Answer

A JFET operating as a voltage-controlled resistance is typically biased near the origin, has minimum resistance at VGS = 0, and operates in the ohmic region, making all of the provided statements correct.

Question 20

An E- MOSFET cannot use
A)drain- feedback bias
B)voltage- divider bias
C)self- bias

Accepted Answer

An E-MOSFET (Enhancement MOSFET) cannot use self-bias because it requires a positive gate-source voltage to turn on, which self-biasing cannot provide.

Quiz 8: Field-Effect Transistors Fets

Figure 4 -Refer to Figure 4. The transistor is biased for

A certain MOSFET has IDSS = 6 mA, VGS = -0.67 V, and VGS(off ) = -5 V. The drain current, ID is

Figure 1 -Refer to Figure 1, which represents two curves for a JFET. At ID = 6 mA, the transconductance, gm, is approximately

Figure 3 Assume I_DSS= 3.5 mA and V_GS(off)= -2 V. -Refer to Figure 3. An advantage to the voltage divider bias over self- bias is that voltage- divider bias

Figure 3 Assume I_DSS= 3.5 mA and V_GS(off)= -2 V. -If a JFET bias circuit is designed with current- source biasing,

Figure 1 -Refer to Figure 1. The source resistor, RS, that would self- bias this JFET at approximately VGS = -2 V is

Figure 2 Assume the curve in (b) represents the transistor in (a) . -Refer to Figure 2. If VS = 1.3 V, then VGS is

Figure 1 -Refer to Figure 1. The curve on the left is called the

An advantage of a JFET over a BJT is that the JFET has

Figure 2 Assume the curve in (b) represents the transistor in (a) . -Refer to Figure 2. IDSS is approximately

The IGBT has characteristics of a

Figure 5 The equations for K and I_Dare given in part (c) . -Refer to Figure 5. ID is approximately

Assume a transistor has an IDSS of 3.0 mA and a gm0 of 2500 µS. The gate- source cutoff voltage, ^VGS(off) ^{, is}

Figure 3 Assume I_DSS= 3.5 mA and V_GS(off)= -2 V. -Refer to Figure 3. If the drain voltage, VD, is 7.6 V, what is VGS?

Figure 5 The equations for K and I_Dare given in part (c) . -Refer to Figure 5. VGS is

A FET that has no channel until one is induced electrically is

Figure 3 Assume I_DSS= 3.5 mA and V_GS(off)= -2 V. -Refer to Figure 3. If RS were shorted to ground, the current, ID, is

Figure 1 -Refer to Figure 1. The pinch- off voltage, Vp, is

A JFET that is operating as a voltage- controlled resistance is

An E- MOSFET cannot use